2N2152 GP BJT
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Stock
- 281 CRIMSON
- 15 MOTOROLA
- 472 NEW JERSEY SEMICONDUCTOR
- 19 SILICON TRANSISTOR CORP
Trans GP BJT PNP 30V 30A TO-36
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Ge | |
| Maximum Collector Base Voltage | 45 | V |
| Maximum Collector Emitter Saturation Voltage | 0.1@500mA@5A | 0.3@2A@25A |
| Maximum Collector Emitter Voltage | 30 | V |
| Maximum DC Collector Current | 30 | A |
| Maximum Emitter Base Voltage | 25 | V |
| Maximum Operating Temperature | 110 | °C |
| Maximum Power Dissipation | 170000 | mW |
| Type | PNP |