2N2154 GP BJT

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  • 14 ELECTRONIC TRANSISTOR
  • 62 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 60V 30A TO-36

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Ge
Maximum Collector Base Voltage 75 V
Maximum Collector Emitter Saturation Voltage 0.1@500mA@5A 0.3@2A@25A
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 30 A
Maximum Emitter Base Voltage 40 V
Maximum Operating Temperature 110 °C
Maximum Power Dissipation 170000 mW
Type PNP