2N2158 GP BJT
Datasheet: View
Stock
- 5 MOTOROLA
- 96 NEW JERSEY SEMICONDUCTOR
- 1 RFGAIN
- 6 SOLID STATE TRANSISTOR
Trans GP BJT PNP 60V 30A TO-36
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Ge | |
| Maximum Collector Base Voltage | 75 | V |
| Maximum Collector Emitter Saturation Voltage | 0.1@500mA@5A | 0.3@2A@25A |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 30 | A |
| Maximum Emitter Base Voltage | 40 | V |
| Maximum Operating Temperature | 110 | °C |
| Maximum Power Dissipation | 170000 | mW |
| Type | PNP |