2N2160 GP BJT
Datasheet: View
Stock
- 1 CRIMSON
- 1 GENERAL ELECTRIC
- 624 NEW JERSEY SEMICONDUCTOR
- 9 SOLID SATE
- 181 TEXAS INSTRUMENT
- 9 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 150 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.1A@1A | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 2 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 30000 | mW |
| Type | NPN |