2N2177 GP BJT

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  • 1019 NEW JERSEY SEMICONDUCTOR
  • 21 SOLITRON
  • 24 SPRAGUE

Trans GP BJT NPN 100V 2A 4-Pin TO-111

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 150 V
Maximum Collector Emitter Saturation Voltage 1@0.1A@1A V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 2 A
Maximum Emitter Base Voltage 8 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 30000 mW
Type NPN