2N2219 GP BJT

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Stock

  • 1 ELECTRONIC TRANSISTOR
  • 639 FAIRCHILD
  • 1 GENERAL ELECTRIC
  • 562 GENERAL INSTRUMENT
  • 347 INTERMETALL
  • 337 MOTOROLA
  • 48 NATIONAL SEMICONDUCTOR
  • 32871 NEW JERSEY SEMICONDUCTOR
  • 34 RAYTHEON
  • 1 RF POWER
  • 77 SGS
  • 2688 SIEMENS
  • 9 SOLID STATE INC
  • 56 SOLITRON
  • 7 TELEDYNE
  • 26 TELEDYNE SEMI
  • 4866 TEXAS INSTRUMENT
  • 64 TRANSITRON
  • 1 UNITED PAGE
  • 374 UNITRODE
  • 2 WORLD WIDE

Trans GP BJT NPN 30V 0.8A 3-Pin TO-39

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.4@15mA@150mA|1.6@50mA@500mA V
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 0.8 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 800 mW
Type NPN