2N2219A GP BJT

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Stock

  • 221 ESI
  • 36 FRD
  • 82 INTERMETALL
  • 129 MOTOROLA
  • 55 NATIONAL SEMICONDUCTOR
  • 33768 NEW JERSEY SEMICONDUCTOR
  • 21 PHILIPS
  • 65 RAYTHEON
  • 17 SGS
  • 9 SOLID STATE TRANSISTOR
  • 64 SOLITRON
  • 116 ST MICRO
  • 2 TELEDYNE
  • 1 TELEDYNE CRYSTALONICS
  • 4 TELEDYNE SEMI
  • 45 TEXAS INSTRUMENT
  • 14 TOMSON
  • 122 TRANSITRON
  • 7 WORLD WIDE

Trans GP BJT NPN 40V 0.8A 3-Pin TO-39 Box

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 75 V
Maximum Collector Emitter Saturation Voltage 0.3@15mA@150mA|1@50mA@500mA V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 0.8 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 800 mW
Maximum Transition Frequency 300(Min) MHz
Type NPN