2N2297 GP BJT
Datasheet: View
Stock
- 21 BENDIX
- 51 ELECTRONIC TRANSISTOR
- 31 FAIRCHILD
- 18 INTERMETALL
- 36 MOTOROLA
- 145 NEW JERSEY SEMICONDUCTOR
- 47 RAYTHEON
- 4 SYLVANIA
- 6 TRANSITRON
- 1 WESTINGHOUSE
- 1 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 75 | V |
| Maximum Collector Emitter Saturation Voltage | 0.3@15mA@150mA|1@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 0.8 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 800 | mW |
| Maximum Transition Frequency | 300(Min) | MHz |
| Type | NPN |