2N2369A GP BJT

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  • 519 BENDIX
  • 1 ELECTRONIC TRANSISTOR
  • 855 FAIRCHILD
  • 6 GENERAL ELECTRIC
  • 61 INTERMETALL
  • 11177 MOTOROLA
  • 4723 NATIONAL SEMICONDUCTOR
  • 107044 NEW JERSEY SEMICONDUCTOR
  • 36 NUCLEAR PRODUCTS CORP
  • 698 RAYTHEON
  • 25 RCA
  • 68 SGS
  • 6 SOLID STATE SYSTEMS
  • 1 SOLITRON
  • 1 TELEDYNE
  • 68 TELEDYNE
  • 21 TELEDYNE SEMI
  • 418 TEXAS INSTRUMENT
  • 8 TRANSITRON
  • 4696 WORLD WIDE

Trans GP BJT NPN 15V 3-Pin TO-18

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage 0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA V
Maximum Collector Emitter Voltage 15 V
Maximum Emitter Base Voltage 4.5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 360 mW
Type NPN