2N2369B GP BJT
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- 94 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 40 | V |
| Maximum Collector Emitter Saturation Voltage | 0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA | V |
| Maximum Collector Emitter Voltage | 15 | V |
| Maximum Emitter Base Voltage | 4.5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 500 | mW |
| Type | NPN |