2N243 GP BJT
Datasheet: View
Stock
- 568 ELECTRONIC TRANSISTOR
- 681 NEW JERSEY SEMICONDUCTOR
- 2 SEMICOA
- 19 SOLID STATE DEVICES
- 71 SOLID STATE TRANSISTOR
- 11 TEXAS INSTRUMENT
- 10 TRANSITRON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 30 | V |
| Maximum Collector Emitter Voltage | 30 | V |
| Maximum DC Collector Current | 0.1 | A |
| Maximum Emitter Base Voltage | 15 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 300 | mW |
| Type | NPN |