2N2432 GP BJT
Datasheet: View
Stock
- 35 DIKSON
- 3904 INTERNATIONAL DIODE
- 30 NATIONAL SEMICONDUCTOR
- 2581 NEW JERSEY SEMICONDUCTOR
- 4 RAYTHEON
- 5721 TEXAS INSTRUMENT
- 4 TRANSITRON
- 2 WATKINS JOHNSON
- 1 WORLD WIDE
Trans GP BJT NPN 30V 0.1A 3-Pin TO-18
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 30 | V |
| Maximum Collector Emitter Voltage | 30 | V |
| Maximum DC Collector Current | 0.1 | A |
| Maximum Emitter Base Voltage | 15 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 300 | mW |
| Type | NPN |