2N2576 GP BJT
Datasheet: View
Stock
- 3 MOTOROLA
- 630 NEW JERSEY SEMICONDUCTOR
- 4 SILICON TRANSISTOR CORP
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 40 | V |
| Maximum Collector Emitter Saturation Voltage | 0.2@10mA | V |
| Maximum Collector Emitter Voltage | 20 | V |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Transition Frequency | 350(Min) | MHz |
| Type | NPN |