2N2812 GP BJT
Datasheet: View
Stock
- 5 GENERAL SEMICONDUCTOR
- 2 HUGHES
- 537 NEW JERSEY SEMICONDUCTOR
- 9 PIRGO
- 10 SOLITRON DEVICES
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 0.5@0.5mA@5mA | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Operating Temperature | 125 | °C |
| Maximum Power Dissipation | 70000 | mW |
| Type | NPN |