2N2833 RF BJT
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- 236 NEW JERSEY SEMICONDUCTOR
- 1 TEXAS INSTRUMENT
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 30 | V |
| Maximum Collector Emitter Voltage | 15 | V |
| Maximum DC Collector Current | 0.04 | A |
| Maximum Emitter Base Voltage | 2.5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Transition Frequency | 2000 | MHz |
| Minimum DC Current Gain | 30@3mA@1V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |