2N2857 RF BJT

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  • 1 AMELCO
  • 6 MICROSEMI CONDUCTOR
  • 19 MOTOROLA
  • 3 NATIONAL SEMICONDUCTOR
  • 61 NEW JERSEY SEMICONDUCTOR
  • 3 RCA
  • 2 SOLID SATE
  • 1 SOLID STATE TRANSISTOR
  • 2 ST MICRO
  • 4 WORLD WIDE

Trans GP BJT NPN 15V 0.04A 4-Pin TO-72

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Features Values Unit
Configuration Single
Maximum Base Emitter Saturation Voltage 1@1mA@10mA V
Maximum Collector Base Voltage 30 V
Maximum Collector Emitter Saturation Voltage 0.4@1mA@10mA V
Maximum Collector Emitter Voltage 15 V
Maximum DC Collector Current 0.04 A
Maximum Emitter Base Voltage 3 V
Maximum Operating Temperature 200 °C
Maximum Transition Frequency 1600(Typ) MHz
Minimum DC Current Gain 30@3mA@1V
Minimum Operating Temperature -65 °C
Number of Elements per Chip 1
Type NPN