2N2880 GP BJT
Datasheet: View
Stock
- 37 API
- 6 BENDIX
- 12 NATIONAL SEMICONDUCTOR
- 756 NEW JERSEY SEMICONDUCTOR
- 7 SOLITRON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 110 | V |
| Maximum Collector Emitter Saturation Voltage | 0.25@0.1A@1A|1.5@0.5A@5A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 2000 | mW |
| Type | NPN |