2N2893 GP BJT

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  • 308 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 5A 4-Pin TO-111

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.75@0.2mA@1mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 5 A
Maximum Power Dissipation 30000 mW
Type NPN