2N2894 GP BJT
Datasheet: View
Stock
- 25 FAIRCHILD
- 472 FRD
- 51 INTERMETALL
- 512 MOTOROLA
- 21 NATIONAL SEMICONDUCTOR
- 9783 NEW JERSEY SEMICONDUCTOR
- 91 SGS
- 6 SOLID SATE
- 30 SOLID STATE TRANSISTOR
- 1125 TEXAS INSTRUMENT
- 105 TRANSITRON
- 10 UNITED TECHNOLIGIES
- 1 WALBERN
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 12 | V |
| Maximum Collector Emitter Saturation Voltage | 0.15@1mA@10mA|0.2@3mA@30mA|0.5@10mA@100mA | V |
| Maximum Collector Emitter Voltage | 12 | V |
| Maximum DC Collector Current | 0.2 | A |
| Maximum Emitter Base Voltage | 4 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 360 | mW |
| Maximum Transition Frequency | 400(Min) | MHz |
| Type | PNP |