2N2906A GP BJT
Datasheet: View
Stock
- 241 AMELCO
- 137 FAIRCHILD
- 2 GENERAL ELECTRIC
- 4926 GENERAL INSTRUMENT
- 1456 INTERMETALL
- 518 MOTOROLA
- 673 NATIONAL SEMICONDUCTOR
- 18801 NEW JERSEY SEMICONDUCTOR
- 8 RAYTHEON
- 42524 SIEMENS
- 6 ST MICRO
- 41 TEXAS INSTRUMENT
- 1336 TRANSITRON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.4@15mA@150mA|1.6@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 0.6 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 500 | mW |
| Type | PNP |