2N2907A GP BJT

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  • 26 AMELCO
  • 3 FAIRCHILD
  • 4 GENERAL ELECTRIC
  • 2 GENERAL INSTRUMENT
  • 34 INTERMETALL
  • 195 MOTOROLA
  • 153 NATIONAL SEMICONDUCTOR
  • 20833 NEW JERSEY SEMICONDUCTOR
  • 150 PHILIPS
  • 18 SIEMENS
  • 1 SILICON TRANSISTOR CORP
  • 100 SOLID STATE TRANSISTOR
  • 1 SOLITRON
  • 24 TELEFUNKIN
  • 131 TEXAS INSTRUMENT
  • 12 TOMSON

Trans GP BJT PNP 60V 0.6A 3-Pin TO-18

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.4@15mA@150mA|1.6@50mA@500mA V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 0.6 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 500 mW
Type PNP