2N2975 GP BJT

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  • 4 NATIONAL SEMICONDUCTOR
  • 11 UNION CARBIDE

Trans GP BJT NPN 45V 0.03A

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Features Values Unit
Category Bipolar Power
Configuration Dual
Material Si
Maximum Collector Base Voltage 45 V
Maximum Collector Emitter Saturation Voltage 0.35@100uA@1mA V
Maximum Collector Emitter Voltage 45 V
Maximum DC Collector Current 0.03 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 300 mW
Type NPN