2N2978 GP BJT

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  • 2003 NEW JERSEY SEMICONDUCTOR
  • 5 UNION CARBIDE

Trans GP BJT NPN 60V 0.03A

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Features Values Unit
Category Bipolar Power
Configuration Dual
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.35@100uA@1mA V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 0.03 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 500 mW
Type NPN