2N2986 GP BJT

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  • 118 NEW JERSEY SEMICONDUCTOR
  • 3 SOLID STATE DEVICES

Trans GP BJT NPN 120V 3A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.25@0.4mA@1mA V
Maximum Collector Emitter Voltage 120 V
Maximum DC Collector Current 3 A
Maximum Power Dissipation 5000 mW
Type NPN