2N2986 GP BJT
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- 118 NEW JERSEY SEMICONDUCTOR
- 3 SOLID STATE DEVICES
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 1.25@0.4mA@1mA | V |
| Maximum Collector Emitter Voltage | 120 | V |
| Maximum DC Collector Current | 3 | A |
| Maximum Power Dissipation | 5000 | mW |
| Type | NPN |