2N2990 GP BJT
Datasheet: View
Stock
- 423 NEW JERSEY SEMICONDUCTOR
- 187 SILICON TRANSISTOR CORP
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 0.8@0.02mA@0.2mA | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Power Dissipation | 5000 | mW |
| Type | NPN |