2N2995 GP BJT

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  • 141 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 100V 1A

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Features Values Unit
Category Bipolar Power
Material Si
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 1 A
Maximum Operating Temperature 175 ᄀC
Maximum Power Dissipation 1500 mW
Maximum Transition Frequency 10(Min) MHz
Type NPN