2N3016 GP BJT

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  • 36 BENDIX
  • 7 NEW JERSEY SEMICONDUCTOR
  • 105 SOLID DEVICES

Trans GP BJT NPN 50V 1A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.75@0.5mA@1mA V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 1 A
Maximum Power Dissipation 5000 mW
Type NPN