2N3017 GP BJT

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  • 859 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 50V 5A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.75@0.5mA@1mA V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 5 A
Maximum Power Dissipation 5000 mW
Type NPN