2N3019 GP BJT
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- 8890 CONTINENTAL DEVICES
- 96 FAIRCHILD
- 77 INTERMETALL
- 2 MICROSEMI CONDUCTOR
- 833 MOTOROLA
- 163 NATIONAL SEMICONDUCTOR
- 34021 NEW JERSEY SEMICONDUCTOR
- 5 PHILIPS
- 213 RAYTHEON
- 6 RF POWER
- 43 SGS
- 59 SIEMENS
- 1 TELEDYNE
- 48 TELEFUNKIN
- 9 TEXAS INSTRUMENT
- 9 TRANSITRON
Trans GP BJT NPN 80V 1A 3-Pin TO-39
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 140 | V |
| Maximum Collector Emitter Saturation Voltage | \0.2@15mA@150mA | 0.5@50mA@500mA\ |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 800 | mW |
| Type | NPN |