2N3020 GP BJT

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  • 6 FAIRCHILD
  • 18 INTERMETALL
  • 5 MOTOROLA
  • 12 NATIONAL SEMICONDUCTOR
  • 922 NEW JERSEY SEMICONDUCTOR
  • 2 PHILIPS
  • 8 RAYTHEON
  • 1 TRANSITRON
  • 10 WORLD WIDE

Trans GP BJT NPN 80V 1A 3-Pin TO-39 Box

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 140 V
Maximum Collector Emitter Saturation Voltage 0.2@15mA@150mA 0.5@50mA@500mA
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 800 mW
Maximum Transition Frequency 100(Min) MHz
Type NPN