2N3034 GP BJT

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  • 6 NEW JERSEY SEMICONDUCTOR
  • 231 TEXAS INSTRUMENT

Trans GP BJT NPN 80V 1.2A 3-Pin TO-39

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 0.25@15mA@150mA|1@50mA@500mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 1.2 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 800 mW
Type NPN