2N3034 GP BJT
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- 6 NEW JERSEY SEMICONDUCTOR
- 231 TEXAS INSTRUMENT
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 120 | V |
| Maximum Collector Emitter Saturation Voltage | 0.25@15mA@150mA|1@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 1.2 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 800 | mW |
| Type | NPN |