2N3036 GP BJT
Datasheet: View
Stock
- 648 NEW JERSEY SEMICONDUCTOR
- 1 RAYTHEON
- 1 RF POWER
- 1 TEXAS
- 667 TEXAS INSTRUMENT
- 2 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 120 | V |
| Maximum Collector Emitter Saturation Voltage | 0.25@15mA@150mA | 1@50mA@500mA |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 1.2 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 800 | mW |
| Type | NPN |