2N3055A GP BJT
Datasheet: View
Stock
- 39 MOTOROLA
- 4736 NEW JERSEY SEMICONDUCTOR
- 265 ON SEMI
- 2 SOLID SATE
- 20 UMN
- 18 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 200 | V |
| Maximum Collector Emitter Saturation Voltage | 1.1@400mA@4A|3@3.3A@10A|5@7A@15A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 15 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 115000 | mW |
| Maximum Transition Frequency | 6 | MHz |
| Type | NPN |