2N3056A GP BJT
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- 1540 NEW JERSEY SEMICONDUCTOR
- 9 RAYTHEON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 1.1@400mA@4A|3@3.3A@10A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 15 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 115000 | mW |
| Maximum Transition Frequency | 2.5(Min) | MHz |
| Type | NPN |