2N3056A GP BJT

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  • 1540 NEW JERSEY SEMICONDUCTOR
  • 9 RAYTHEON

Trans GP BJT NPN 60V 15A 3-Pin(2+Tab) TO-204 Tray

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 1.1@400mA@4A|3@3.3A@10A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 15 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 115000 mW
Maximum Transition Frequency 2.5(Min) MHz
Type NPN