2N3117 GP BJT
Datasheet: View
Stock
- 12 INTERMETALL
- 7 NATIONAL SEMICONDUCTOR
- 10942 NEW JERSEY SEMICONDUCTOR
- 1 RAYTHEON
- 74 SOLID STATE TRANSISTOR
- 1 SOLITRON DEVICES
- 326 TEXAS INSTRUMENT
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.35@1mA | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Transition Frequency | 60(Min) | MHz |
| Type | NPN |