2N3250 GP BJT
Datasheet: View
Stock
- 14283 FAIRCHILD
- 6816 INTERMETALL
- 1306 MOTOROLA
- 485 NATIONAL SEMICONDUCTOR
- 80444 NEW JERSEY SEMICONDUCTOR
- 18 RAYTHEON
- 16 TELEDYNE SEMI
- 16263 TEXAS INSTRUMENT
- 5 TRANSITRON
- 6 WATKINS JOHNSON
- 499 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 50 | V |
| Maximum Collector Emitter Saturation Voltage | 0.25@1mA@10mA|0.5@5mA@50mA | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 0.2 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 360 | mW |
| Maximum Transition Frequency | 250(Min) | MHz |
| Type | PNP |