2N3251 GP BJT
Datasheet: View
Stock
- 10 CONTINENTAL DEVICES
- 3395 ESE
- 395 FAIRCHILD
- 159 INTERMETALL
- 1131 MOTOROLA
- 17 NATIONAL SEMICONDUCTOR
- 111623 NEW JERSEY SEMICONDUCTOR
- 35 RAYTHEON
- 665 SOLID STATE TRANSISTOR
- 75 SPRAGUE
- 158 TEXAS INSTRUMENT
- 2 TRANSITRON
- 40 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 50 | V |
| Maximum Collector Emitter Saturation Voltage | 0.25@1mA@10mA|0.5@5mA@50mA | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 0.2 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 360 | mW |
| Maximum Transition Frequency | 300(Min) | MHz |
| Type | PNP |