2N3251A GP BJT
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Stock
- 15 FAIRCHILD
- 1348 MOTOROLA
- 13578 NEW JERSEY SEMICONDUCTOR
- 12 RAYTHEON
- 2 SOLID SATE
- 114 TEXAS INSTRUMENT
- 4 TRANSITRON
- 1 UNITED TECHNOLIGIES
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.25@1mA@10mA|0.5@5mA@50mA | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 0.2 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 360 | mW |
| Type | PNP |