2N3266 GP BJT

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  • 157 NEW JERSEY SEMICONDUCTOR
  • 3 SILICON TRANSISTOR CORP
  • 1 SOLID SATE

Trans GP BJT NPN 60V 25A 3-Pin TO-63

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.2@1.2mA@15mA V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 25 A
Maximum Power Dissipation 125000 mW
Type NPN