2N329A GP BJT
Datasheet: View
Stock
- 1 CI
- 2 ELECTRONIC TRANSISTOR
- 2 GENERAL ELECTRIC
- 6 HUGHES
- 130 NATIONAL SEMICONDUCTOR
- 143 NEW JERSEY SEMICONDUCTOR
- 346 RAYTHEON
- 18 RF POWER
- 48 SOLID SATE
- 337 SOLITRON
- 4 SPECTRUM
- 18 SPRAGUE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.25@1mA@10mA|0.5@5mA@50mA | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 0.2 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 360 | mW |
| Type | PNP |