2N332A GP BJT

default part image

Datasheet: View

Stock

  • 17 GENERAL ELECTRIC
  • 884 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 45V

Request For Quote
Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 45 V
Maximum Collector Emitter Saturation Voltage 1@2.2mA@5mA V
Maximum Collector Emitter Voltage 45 V
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 500 mW
Type NPN