2N3375 RF BJT

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  • 71 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 40V 1.5A 3-Pin TO-60

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Features Values Unit
Configuration Single
Maximum Collector Base Voltage 65 V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 1.5 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 150 °C
Maximum Transition Frequency 400 MHz
Minimum DC Current Gain 10@250mA@5V
Minimum Operating Temperature -65 °C
Number of Elements per Chip 1
Output Power 3(Min) W
Type NPN