2N3416 GP BJT

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  • 72 GENERAL ELECTRIC
  • 1 MOTOROLA
  • 5505 NATIONAL SEMICONDUCTOR
  • 1215 NEW JERSEY SEMICONDUCTOR
  • 5 RF POWER
  • 220 ROHM

Trans GP BJT NPN 50V 0.5A 3-Pin TO-92 Tape and Box

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 50 V
Maximum Collector Emitter Saturation Voltage 0.3@3mA@50mA V
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Type NPN