2N3419 GP BJT

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  • 1467 NEW JERSEY SEMICONDUCTOR
  • 21 SILICON TRANSISTOR CORP

Trans GP BJT NPN 80V 3A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 125 V
Maximum Collector Emitter Saturation Voltage 0.25@0.1A@1A|0.5@0.2A@2A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 8 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1000 mW
Type NPN