2N341A GP BJT
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- 569 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 125 | V |
| Maximum Collector Emitter Saturation Voltage | 0.25@0.1A@1A|0.5@0.2A@2A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 3 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Type | NPN |