2N3421 GP BJT

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  • 97 API
  • 1398 CENTAL SEMI
  • 7 ELECTRONIC TRANSISTOR
  • 1778 NEW JERSEY SEMICONDUCTOR
  • 64 SILICON TRANSISTOR CORP
  • 14 TEXAS INSTRUMENT
  • 84 TIC SEMI

Trans GP BJT NPN 80V 3A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 125 V
Maximum Collector Emitter Saturation Voltage 0.25@0.1A@1A|0.5@0.2A@2A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 8 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1000 mW
Type NPN