2N3424 GP BJT

default part image

Datasheet: View

Stock

  • 393 NEW JERSEY SEMICONDUCTOR
  • 4 RAYTHEON
  • 34 TEXAS INSTRUMENT

Trans GP BJT NPN 60V 3A 3-Pin TO-5

Request For Quote Datasheet
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 85 V
Maximum Collector Emitter Saturation Voltage 0.25@0.1A@1A|0.5@0.2A@2A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 8 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1000 mW
Type NPN