2N3439 GP BJT

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Stock

  • 22 CENTAL SEMI
  • 33 FAIRCHILD
  • 11 GENERAL ELECTRIC
  • 193 HARRIS
  • 464 MOTOROLA
  • 9 NATIONAL SEMICONDUCTOR
  • 26739 NEW JERSEY SEMICONDUCTOR
  • 298 RCA
  • 12 RF POWER
  • 226 SILICON TRANSISTOR CORP
  • 10 SOLID STATE TRANSISTOR
  • 1 SOLITRON
  • 10 SOLITRON DEVICES
  • 16 SPECTRONICS
  • 10 ST MICRO
  • 13 TEXAS INSTRUMENT
  • 3 TOMSON
  • 10 WORLD WIDE

Trans GP BJT NPN 350V 1A 3-Pin TO-39 Box

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 450 V
Maximum Collector Emitter Saturation Voltage 0.5@4mA@50mA V
Maximum Collector Emitter Voltage 350 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1000 mW
Maximum Transition Frequency 15(Min) MHz
Type NPN