2N3441 GP BJT

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Stock

  • 2 AMPEREX
  • 566 BANESA
  • 11 CRIMSON
  • 4 FAIRCHILD
  • 2 GENERAL ELECTRIC
  • 16 KRC
  • 65 MOTOROLA
  • 11997 NEW JERSEY SEMICONDUCTOR
  • 19 RCA
  • 2 SGS
  • 30 SILICON TRANSISTOR CORP
  • 21 SOLID STATE DEVICES
  • 1 SOLID STATE TRANSISTOR
  • 7 SOLITRON
  • 1 TOMSON
  • 54 WESTINGHOUSE

Trans GP BJT NPN 140V 3A 3-Pin(2+Tab) TO-66

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 160 V
Maximum Collector Emitter Saturation Voltage 1@50mA@0.5A V
Maximum Collector Emitter Voltage 140 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 3000 mW
Type NPN