2N3467 GP BJT
Datasheet: View
Stock
- 20 FAIRCHILD
- 521 MOTOROLA
- 32 NATIONAL SEMICONDUCTOR
- 5623 NEW JERSEY SEMICONDUCTOR
- 132 RAYTHEON
- 40 SOLITRON
- 124 TEXAS INSTRUMENT
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 40 | V |
| Maximum Collector Emitter Saturation Voltage | 0.35@15mA@150mA|0.6@50mA@500mA|1.2@100mA@1A | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 175 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Type | PNP |